STP46NF30

STMicroelectronics

STMicroelectronics STripFET™ II, STP46NF30, N-Channel MOSFET, 300 Vdss, 42 A Id, 75 mΩ Rds(on) @ 10 V, TO-220-3, Through Hole, 175°C TJ.

STMicroelectronics STP46NF30
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Technical specifications

STP46NF30 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation300W (Tc)
Operating temperature175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3200 pF @ 25 V

Technical details

300 V / 42 A N-channel — primary-side switch or high-voltage DC rail

Gate drive and switching — 90 nC Qg at 10 V

Gate charge is specified at 90 nC typical at 10 V, with a maximum gate-source voltage of ±20 V. Input capacitance is 3200 pF at 25 V drain-source, which together with the gate charge sets the switching speed and driver power loss.

Package and thermal — TO-220, 300 W dissipation

Maximum power dissipation is 300 W at case temperature, and the maximum junction temperature is 175°C. The TO-220 tab is the drain connection; the heatsink pad must be electrically isolated or connected to the drain potential. For high-current designs, the leadframe and PCB traces need to handle the 42 A rating — expect a large copper pour or external bus bar.

The base product number is STP46, and the part is RoHS compliant per ST's standard lead-free finish.

STP46NF30
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