STP45NF06

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II STP45NF06, N-Channel MOSFET, 60V Vdss, 38A Id, 28mOhm Rds(on) at 10V, TO-220-3, Through Hole, 175°C TJ.

STMicroelectronics STP45NF06
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Technical specifications

STP45NF06 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation80W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds980 pF @ 25 V

Technical details

The TO-220 package with through-hole mounting is a field-swappable form factor — no hot-air station needed, just a soldering iron and a clean pad.

Gate charge and switching — the number that drives the driver choice

Total gate charge is 58 nC at 10 V.

Thermal and package — the TO-220's limits in a real enclosure

Maximum power dissipation is 80 W at the case, but that assumes an infinite heatsink at 25°C. The through-hole TO-220 is a standard footprint; the tab is the drain, so the heatsink may need electrical isolation unless the system shares the drain potential.

STP45NF06
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