Its 600 V drain-source rating and 30 A continuous drain current place it squarely in the 300–600 W offline converter class.
The specified drive voltage for achieving the rated Rds(on) is 10 V, which is standard for a high-voltage MOSFET. The ±25 V maximum gate-source rating gives headroom against ringing on the gate node, but a 15 V Zener clamp is still a good practice on production boards.
Thermal design — the 210 W dissipation limit is package-constrained
In practice, with a TO-220 bolted to a reasonable heatsink in still air, derate to about 50–60 W continuous. The 1920 pF input capacitance at 100 V drain bias is typical for this die size; it means the gate driver sees a capacitive load of about 2 nF, which is manageable with a 10–15 Ω series gate resistor to control ringing.