STP45N60DM2AG

STMicroelectronics

STMicroelectronics STP45N60DM2AG, Automotive AEC-Q101 MDmesh DM2 N-Channel MOSFET, TO-220-3, 600 V Vdss, 34 A Id, 93 mOhm Rds(on) at 17 A, -55°C to 150°C.

STMicroelectronics STP45N60DM2AG
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[IN STOCK] In Stock: 35 pcs
$12.84/ pc

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Technical specifications

STP45N60DM2AG specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs93mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V

Technical details

The STP45N60DM2AG: Maximum on-resistance is 93 mOhm at 17 A drain current with 10 V gate drive — the 10 V drive rail is mandatory to achieve the rated Rds(on); driving from a 5 V logic rail leaves the FET in the linear region. At 34 A full load the conduction loss hits 107 W (I²R) before derating for junction temperature rise, so the 250 W power-dissipation ceiling at the case is the practical limit only with an adequate heatsink. Total gate charge is 56 nC at 10 V.

AEC-Q101 grade: what the OEM auditor expects to see

The STP45N60DM2AG carries AEC-Q101 qualification — not just 'automotive-capable' but formally qualified with the PPAP documentation an OEM auditor will request. Capable is not qualified; this part is.

Sourcing — production availability and channel posture

No stock-holding claim; the part is procured per the BOM quantity and lead time.

STP45N60DM2AG
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