400 V, 38 A N-channel MOSFET for automotive and industrial power switching
The STMicroelectronics STP45N40DM2AG is an N-channel power MOSFET built on the MDmesh DM2 planar technology, rated for 400 V drain-source voltage and 38 A continuous drain current at 25°C case temperature.
The maximum Rds(on) is 72 mOhm at 19 A drain current with a 10 V gate drive. That 10 V drive voltage is the recommended rail for achieving the lowest on-resistance; driving the gate below 10 V will increase conduction loss. The total gate charge of 56 nC at 10 V is moderate for this voltage and current class, so a standard gate-driver IC with a few amperes of peak current can switch it in the tens of nanoseconds — useful for hard-switched topologies where switching losses matter.
Automotive-grade temperature range and package
The through-hole mount suits point-of-load designs where mechanical robustness is preferred over surface-mount assembly.
The product status is Active and ROHS3 Compliant.