STP43N60DM2

STMicroelectronics

STMicroelectronics MDmesh™ DM2 series, STP43N60DM2, N-Channel MOSFET, 600 V Vdss, 34 A Id, 93 mOhm Rds(on) at 10 V, TO-220-3, through-hole, -55 to 150 °C.

STMicroelectronics STP43N60DM2
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[IN STOCK] In Stock: 3 pcs
$3.74/ pc

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Technical specifications

STP43N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs93mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V

Technical details

The TO-220-3 through-hole package makes it a straightforward swap on a customer site — no hot-air station needed, just a screwdriver and a soldering iron. This is the kind of part that lives in a field-service kit for PFC stages, offline flyback converters, and motor-drive bridges where 600 V isolation is non-negotiable.

Gate charge and switching — what 56 nC buys you

With a total gate charge of 56 nC at 10 V, the STP43N60DM2 is a moderate-speed switch — not the fastest in the MDmesh family, but fast enough for hard-switching topologies up to the 100 kHz range without excessive gate-drive losses. The input capacitance is 2500 pF at 100 V drain bias, which means the gate-driver sees a manageable load. Compare that to a higher-current sibling like the STP55N60DM2: you get a lower Rds(on) but a larger gate charge, so the trade-off is conduction loss versus switching loss. For a 600 V, 34 A design running at 50–70 kHz, this part hits the sweet spot.

Thermal reality — 250 W needs a heatsink

In practice, derate aggressively. The TO-220 package with a tab soldered to a copper island on the PCB or bolted to a finned heatsink is the standard approach.

STP43N60DM2
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