Input capacitance is 4650 pF at 100 V drain bias.
Package and thermal interface — TO-220 bolted-down design
The STP42N65M5 comes in a TO-220-3 through-hole package. Maximum power dissipation is 190 W at case temperature.
STP42N65M5 N-Channel MOSFET, 650 V, 33 A, TO-220-3
MPNSTP42N65M5
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STMicroelectronics STP42N65M5, N-Channel MOSFET, MDmesh™ V series, 650 V Vdss, 33 A Id, 79 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.
$11.1000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 79mOhm @ 16.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4650 pF @ 100 V |
Product details
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