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STMicroelectronics STP40NF20 — Discrete Semiconductors

STP40NF20 N-Channel MOSFET, 200 V, 40 A, TO-220

MPNSTP40NF20
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STMicroelectronics STripFET™ STP40NF20, N-Channel MOSFET, 200 V Vdss, 40 A continuous drain, 45 mOhm Rds(on) at 20 A and 10 V, TO-220-3 through-hole package, -55°C to 150°C operating temperature.

$3.8600Ref. price · indicative, final on quote
STMicroelectronics STP40NF20 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP40NF20 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 25 V

Product details

Switching and drive considerations

That is moderate for a 200 V part — the gate driver does not need to be a monster, but the 75 nC number tells you the switching losses at high frequency. For a 100 kHz SMPS, the gate-drive power alone is about 75 mW per MHz of switching frequency times the gate voltage.

Temperature range and field replacement

The TO-220 through-hole package is a field-swap favourite: two screws and a soldering iron, no hot-air station needed. Orientation is obvious — the metal tab is the drain, the pinout is standard TO-220. Keep a few in the kit.

Frequently asked questions

What is the Rds(on) and gate threshold of STP40NF20?

Maximum on-resistance is 45 mOhm at 20 A drain current and 10 V gate drive. The gate threshold voltage is 4 V maximum at 250 µA drain current. The 10 V drive is required to achieve the rated Rds(on).