STMicroelectronics STripFET™ II STP40NF12, N-Channel MOSFET, 120 V drain-to-source, 40 A continuous drain current, 32 mOhm on-resistance at 10 V gate drive, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1880 pF @ 25 V |
The TO-220-3 through-hole package keeps the device in the standard power-tab footprint for heatsink mounting.
STMicroelectronics lists the STP40NF12 as Obsolete.
No official replacement order code is recorded. A functionally equivalent N-channel MOSFET in TO-220 with ≥120 V Vdss, ≥40 A Id, and ≤32 mOhm Rds(on) at 10 V gate drive would be the closest parametric match. Pin compatibility must be verified against the target part's datasheet.