STP40N60M2

STMicroelectronics

STMicroelectronics STP40N60M2, MDmesh™ II Plus series, N-Channel MOSFET, 600 V Vdss, 34 A continuous drain, 88 mOhm Rds(on) at 10 V, 57 nC gate charge, TO-220-3 package, -55°C to 150°C junction temperature.

STMicroelectronics STP40N60M2
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Technical specifications

STP40N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs88mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V

Technical details

At full rated current, expect roughly I²R loss of 34² × 0.088 ≈ 102 W — that number lands squarely inside the 250 W maximum power dissipation, but only with a heatsink that keeps the case temperature under control. Input capacitance of 2500 pF at 100 V drain-source is typical for this die size. It influences the gate-drive power requirement and the turn-on delay — factor it into the driver's peak current and the gate-loop inductance budget.

The wide range also gives headroom for transient overloads without immediate derating.

The exposed metal tab is the drain — ensure electrical isolation from the heatsink unless the system topology allows a shared drain potential. The TO-220 form factor is a mature, widely socketed footprint for single-ended power stages.

STP40N60M2
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