Skip to main content
Log in
STMicroelectronics STP400N4F6 — Discrete Semiconductors

STP400N4F6 N-Channel MOSFET, 40V 120A TO-220-3, Obsolete

MPNSTP400N4F6
Obsolete

STMicroelectronics DeepGATE™, STripFET™ VI series, N-Channel MOSFET, 40 V, 120 A (Tc), 1.7 mOhm @ 60 A, 10 V, TO-220-3, Through Hole, -55°C ~ 175°C (TJ).

STMicroelectronics STP400N4F6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP400N4F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs377 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20000 pF @ 25 V

Product details

40 V, 120 A N-channel in TO-220 — what the ratings mean

The 1.7 mOhm Rds(on) at 60 A is the figure that matters for a low-side switching or synchronous rectifier stage on a 40 V rail — it keeps conduction losses under 10 W at that current, which the 300 W dissipation ceiling can handle with adequate heatsinking. The gate charge of 377 nC at 10 V means the driver needs to source about 3.8 µC per switching cycle; at 100 kHz that is 380 mA average gate drive current, so a dedicated gate-driver IC is advisable rather than a microcontroller GPIO.

Frequently asked questions

What is the replacement for STP400N4F6?

A form-fit-function substitute would need to match the 40 V Vdss, 120 A Id, 1.7 mOhm Rds(on) at 10 V, and TO-220-3 package. Evaluation against a candidate like the STP200N4F6 or other 40 V STripFET parts would require checking Rds(on) and gate charge.