STP3NK90Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics STP3NK90Z, SuperMESH™ series, N-channel MOSFET, 900 V Vdss, 3 A Id, 4.8 Ohm Rds(on), TO-220-3 through-hole, -55 to 150 °C.

STMicroelectronics STP3NK90Z
Download datasheet (PDF)
[IN STOCK] In Stock: 541 pcs
$1.69/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STP3NK90Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.8Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs22.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds590 pF @ 25 V

Technical details

900 V, 3 A — the offline power workhorse

Packaged in a TO-220-3 through-hole case, it is a standard choice for offline flyback converters, auxiliary power supplies, and high-voltage DC-DC stages where a single-switch topology needs a 900 V blocking voltage. With a gate charge of 22.7 nC at 10 V, the drive power requirement is modest — a simple PWM controller's totem-pole output can drive it directly at switching frequencies up to 100 kHz without excessive gate-drive loss.

Thermal and switching headroom

The part is ROHS3 compliant.

STP3NK90Z
[ALLOC] verified
Quote