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STMicroelectronics STP3NK90Z — Discrete Semiconductors

STP3NK90Z N-Channel MOSFET, 900 V, 3 A, TO-220-3

MPNSTP3NK90Z
Active

STMicroelectronics STP3NK90Z, SuperMESH™ series, N-channel MOSFET, 900 V Vdss, 3 A Id, 4.8 Ohm Rds(on), TO-220-3 through-hole, -55 to 150 °C.

$2.0100Ref. price · indicative, final on quote
STMicroelectronics STP3NK90Z datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP3NK90Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.8Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs22.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds590 pF @ 25 V

Product details

900 V, 3 A — the offline power workhorse

Packaged in a TO-220-3 through-hole case, it is a standard choice for offline flyback converters, auxiliary power supplies, and high-voltage DC-DC stages where a single-switch topology needs a 900 V blocking voltage. With a gate charge of 22.7 nC at 10 V, the drive power requirement is modest — a simple PWM controller's totem-pole output can drive it directly at switching frequencies up to 100 kHz without excessive gate-drive loss.

Thermal and switching headroom

The part is ROHS3 compliant.

Frequently asked questions

What is the closest equivalent to STP3NK90Z?

No official pin-compatible second-source or cross-reference is listed on the record. For a same-function 900 V N-channel MOSFET in TO-220, parts from other manufacturers with similar Vdss, Id, and Rds(on) ratings exist, but no direct drop-in replacement is confirmed. Verify the gate threshold and package footprint against the BOM before substituting.