STP3NK60ZFP

STMicroelectronics

STMicroelectronics SuperMESH™ N-Channel MOSFET, STP3NK60ZFP, 600 V Vdss, 2.4 A Continuous Drain (Tc), 3.6 Ohm Rds(on) @ 1.2 A, 10 V, ±30 V Vgs, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

STMicroelectronics STP3NK60ZFP
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[IN STOCK] In Stock: 44 pcs
$1.53/ pc

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Technical specifications

STP3NK60ZFP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.4A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs3.6Ohm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs11.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds311 pF @ 25 V

Technical details

NRND — plan your BOM accordingly

That means STMicroelectronics is not actively promoting it for new projects, though it may still be available for existing production runs.

Gate charge and switching

This keeps the gate drive energy low and allows reasonable switching speeds with a standard MOSFET driver. Input capacitance (Ciss) is 311 pF at 25 V drain-source, giving the designer a clean number for estimating switching losses in a hard-switched topology.

The TO-220FP full-pack package isolates the tab — no heatsink insulator needed, which simplifies assembly in through-hole designs. Maximum power dissipation is 20 W at case temperature. The through-hole mounting is breadboard-friendly for prototyping, though the full-pack body is larger than a standard TO-220.

STP3NK60ZFP
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