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STMicroelectronics STP310N10F7 — Discrete Semiconductors

STP310N10F7 MOSFET, 100 V, 180 A, 2.7 mOhm Rds(on)

MPNSTP310N10F7
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STMicroelectronics STP310N10F7, DeepGATE STripFET VII N-channel MOSFET, 100 V drain-source, 180 A continuous drain, 2.7 mOhm Rds(on) at 60 A, 10 V, 180 nC gate charge, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

$5.8800Ref. price · indicative, final on quote
STMicroelectronics STP310N10F7 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP310N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.8V @ 250µA
Rds on (Max) @ id, vgs2.7mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12800 pF @ 25 V

Product details

The STP310N10F7: The on-resistance is specified at 2.7 mOhm maximum at 60 A with 10 V gate drive — this is the conduction loss figure that sets the I²R dissipation in high-current paths like synchronous rectifiers, motor-drive half-bridges, and battery isolation switches.

180 A continuous drain — current handling and thermal budget

The 180 A continuous drain rating at Tc=25°C is package-limited by the TO-220-3's thermal resistance; real-world derating applies above 25 °C case temperature.

Through-hole TO-220-3 — mounting and thermal interface

The TO-220-3 through-hole package with a tin-plated copper tab is designed for bolt-down or clip mounting to a heatsink. The tab is electrically common with the drain — insulation is needed if the heatsink is grounded.

Frequently asked questions

What is the Rds(on) of STP310N10F7?

The maximum Rds(on) is 2.7 mOhm at 60 A drain current with 10 V gate drive, measured at 25 °C junction temperature. This is the conduction loss figure for high-current switching applications.