STP30NF20

STMicroelectronics · STripFET™ Series

STMicroelectronics STripFET™ STP30NF20, N-Channel MOSFET, 200V Vdss, 30A Id, 75mOhm Rds(on) at 10V, 38nC Qg, TO-220-3, -55 to 150°C.

STMicroelectronics STP30NF20
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Technical specifications

STP30NF20 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1597 pF @ 25 V

Technical details

200 V, 30 A N-channel — the power switch for medium-voltage rails

Conduction and switching — what the on-resistance and gate charge tell you

At 15 A, that's about 17 W dissipated in the channel alone — the 125 W power dissipation rating gives headroom, but the junction-to-case thermal path in the TO-220 means the heatsink selection is what keeps the die below 150°C. Gate charge is 38 nC typical at 10 V.

Active production — no lifecycle risk for new designs

The base product number STP30 covers a family of 200 V N-channel devices; the STP30NF20 is the standard-threshold version requiring 10 V gate drive for minimum Rds(on). There is no logic-level variant in this suffix — the 4 V maximum threshold at 250 µA confirms it needs the full 10 V rail for best performance.

Through-hole TO-220 — mounting and thermal management

The TO-220-3 package is a through-hole design with a metal tab that is electrically connected to the drain. In a typical board layout, the tab is soldered to a copper pad on the PCB or clamped to a discrete heatsink.

STP30NF20
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