STP2NK90Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics STP2NK90Z, SuperMESH™ N-Channel MOSFET, 900 V Vdss, 2.1 A Id, 6.5 Ohm Rds(on), TO-220-3, -55 to 150 °C.

STMicroelectronics STP2NK90Z
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Technical specifications

STP2NK90Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.1A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6.5Ohm @ 1.05A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V

Technical details

STP2NK90Z
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