STMicroelectronics
STMicroelectronics STP28NM50N, MDmesh™ II N-Channel MOSFET, 500 V Vdss, 21 A continuous drain, 158 mOhm Rds(on) at 10 V, 50 nC gate charge, TO-220-3 through-hole package, 150 °C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 158mOhm @ 10.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1735 pF @ 25 V |
The STMicroelectronics STP28NM50N is a 500 V, 21 A N-channel power MOSFET built on the MDmesh™ II technology platform.
Maximum Rds(on) is 158 mOhm at Vgs = 10 V and Id = 10.5 A. Gate drive voltage is specified at 10 V for lowest on-resistance.
