STMicroelectronics MDmesh™ K5 N-Channel MOSFET, 800 V, 16 A, 280 mOhm, 33 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 100 V |
With a gate charge of 33 nC at 10 V, the STP23N80K5 presents a moderate drive requirement that a standard gate-driver IC or a transformer-coupled drive stage can handle without excessive cross-conduction loss. The input capacitance is 1000 pF at 100 V drain-source, which helps keep the Miller plateau manageable in a half-bridge or active-clamp configuration.
Housed in a TO-220-3 through-hole package, the STP23N80K5 is designed for mounting on a heatsink with a screw or clip.
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