STP220N6F7

STMicroelectronics

STMicroelectronics STripFET™ F7 series, STP220N6F7, N-Channel MOSFET, 60 V Vdss, 120 A Id, 2 mOhm Rds(on) at 10 V, TO-220-3, -55 to 175 °C.

STMicroelectronics STP220N6F7
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Technical specifications

STP220N6F7 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation237W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6400 pF @ 25 V

Technical details

60 V, 120 A power switch in a TO-220

Gate charge is 100 nC at 10 V, so the driver needs to source and sink that charge each switching cycle; figure the gate-drive power as Qg × Vgs × fsw. Input capacitance of 6400 pF at 25 V drain-source tells you the Miller plateau will be present, and the switching speed is partly set by the gate-drive source impedance. The TO-220 tab is the main thermal path; bolt it to a heatsink with thermal compound and torque to the standard 0.4–0.6 N·m. Junction temperature range of -55 to 175 °C covers automotive under-hood and industrial motor-drive environments where the ambient can spike.

This is a standard ST power MOSFET, so it is widely available through the distribution channel. For BOM planning, the base product number STP220 covers the family; the N6F7 suffix identifies the 60 V, F7-generation variant in the TO-220 package.

STP220N6F7
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