STP21N90K5

STMicroelectronics

STMicroelectronics SuperMESH5™ N-Channel MOSFET, STP21N90K5, 900V Vdss, 18.5A continuous drain, 299mOhm Rds(on) at 9A, 43nC gate charge, TO-220-3 through-hole package.

STMicroelectronics STP21N90K5
Download datasheet (PDF)
[IN STOCK] In Stock: 458 pcs
$4.07/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STP21N90K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18.5A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs299mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1645 pF @ 100 V

Technical details

900 V drain-source — the spec that picks the application

The STP21N90K5: The 900 V Vdss rating suits high-voltage offline converters such as PFC boost stages and flyback supplies.

On-resistance and gate charge — the switching loss pair

That's the conduction loss anchor: at 9 A the dissipation is I²R = 24 W, which the 250 W package rating can handle with a proper heatsink. Gate charge totals 43 nC at 10 V — a moderate figure for a 900 V part, meaning the driver doesn't need to push hard. Input capacitance is 1645 pF at 100 V drain-source, which sets the switching speed ceiling; the driver's peak current and the gate resistor together determine the rise and fall times.

Temperature range and what it buys the board

The silicon handles avionics cold starts and engine-bay heat soak.

STP21N90K5
[ALLOC] verified
Quote