STP20NK50Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics STP20NK50Z, SuperMESH™ N-Channel MOSFET, 500 V Vdss, 17 A Id, 270 mOhm Rds(on), TO-220-3, Through Hole, -50°C to 150°C.

STMicroelectronics STP20NK50Z
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[IN STOCK] In Stock: 472 pcs
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Technical specifications

STP20NK50Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation190W (Tc)
Operating temperature-50°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs270mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs119 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 25 V

Technical details

500 V, 17 A N-channel in a TO-220

The TO-220-3 through-hole package suits it for offline power supplies, motor drives, and industrial inverters where the board gets a heatsink and the junction sees up to 150°C.

Conduction and switching — what the numbers mean

That is the conduction loss floor at 25°C junction; at 125°C the on-resistance roughly doubles, so budget the thermal loop around the hot-case Rds(on), not the 25°C number. Gate charge totals 119 nC at 10 V — a 1 A gate driver charges the gate in about 120 ns, but the 2600 pF input capacitance at 25 V drain means the Miller plateau stretches the switching interval. The 190 W power dissipation rating at the case tells you the thermal resistance is low enough to pull heat out through a decent heatsink, but the junction-to-case delta still limits continuous current above 100°C.

Insulating washer and thermal compound are needed for a grounded heatsink.

ROHS3 compliant — no exemptions that would trip a European or California BOM audit.

STP20NK50Z
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