STP20NF20

STMicroelectronics · STripFET™ Series

STMicroelectronics STripFET™ series, N-Channel MOSFET, 200V Vdss, 18A Id, 125mOhm Rds(on), TO-220-3, Tube.

STMicroelectronics STP20NF20
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Technical specifications

STP20NF20 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds940 pF @ 25 V

Technical details

200V, 18A N-channel — the switching envelope

The STP20NF20: Gate charge totals 39 nC at 10V, and input capacitance is 940 pF at 25V drain bias. These numbers drive the gate-driver sizing: a 1A gate-driver can switch the gate in roughly 39 ns, though layout parasitics and the Miller plateau extend the real transition time. The ±20V Vgs(max) gives margin for gate overshoot in hard-switched bridges.

Thermal and mechanical fit

The TO-220-3 through-hole package mounts into a standard 0.100-inch pitch footprint with the tab as the drain connection. Maximum power dissipation is 110W at case temperature — derate this when the case runs above 25°C. Gate threshold is specified at 4V maximum with 250µA drain current, so a 5V logic-level gate drive may not fully enhance it — the datasheet's 10V drive voltage for the rated Rds(on) means a 12V or 15V gate rail is the safe choice for minimum on-resistance.

STP20NF20
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