STP200N3LL

STMicroelectronics

STMicroelectronics STP200N3LL, N-Channel MOSFET, 30 V Vdss, 120 A continuous drain, 2.4 mOhm Rds(on) at 10 V, 53 nC gate charge, TO-220 package, -55 to 175 °C

STMicroelectronics STP200N3LL
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[IN STOCK] In Stock: 20 pcs
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Technical specifications

STP200N3LL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation176.5W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs2.4mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5200 pF @ 25 V

Technical details

Gate charge and drive voltage flexibility

The STP200N3LL: The gate charge is 53 nC maximum at 4.5 V. Drive voltages of 4.5 V and 10 V are specified.

175 °C junction — thermal headroom for high-ambient designs

The 176.5 W maximum power dissipation at the case is a theoretical ceiling — real-world dissipation is limited by the heatsink and the 175 °C junction limit.

Package and marking verification

The base product number is STP200. For a counterfeit-detection screen, the laser etch on the top of the TO-220 body should read STP200N3LL with a consistent font and pitch matching ST's factory marking for the production week on the date code.

STP200N3LL
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