STP17NK40ZFP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ series, STP17NK40ZFP, N-Channel MOSFET, 400V Vdss, 15A Id, 250mOhm Rds(on) at 10V, TO-220-3 Full Pack, -55°C to 150°C junction.

STMicroelectronics STP17NK40ZFP
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Technical specifications

STP17NK40ZFP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs250mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Technical details

400 V, 15 A N-channel in TO-220FP — SuperMESH™ series

On-resistance and gate drive — the conduction loss floor

The specified drive voltage of 10 V means this part is optimised for a standard gate-drive rail — a 12 V or 15 V bias from a PWM controller or dedicated driver will saturate the channel fully. At 7.5 A the conduction loss is I²R = 14 W, which the 35 W power dissipation rating (Tc) can handle with adequate heatsinking. Total gate charge is 65 nC at Vgs = 10 V.

Temperature range and package — field reliability

The TO-220FP package (supplier device package TO-220FP) is a through-hole, fully isolated full-pack — the backside tab is electrically isolated from the drain, so the heatsink can be grounded without an insulating spacer. This is a practical advantage in offline power supplies where the drain swings at high voltage.

ROHS3 compliant.

STP17NK40ZFP
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