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STMicroelectronics STP16N65M5 — Discrete Semiconductors

STP16N65M5 MOSFET N-Ch 650V 12A TO-220-3, MDmesh V

MPNSTP16N65M5
Active

STMicroelectronics STP16N65M5, MDmesh™ V, N-Channel MOSFET, 650 Vdss, 12 A Id, 299 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55 to 150 °C.

$3.1200Ref. price · indicative, final on quote
STMicroelectronics STP16N65M5 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP16N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs299mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 100 V

Product details

650 V N-channel in TO-220 — the switching MOSFET for offline supplies

The STP16N65M5: Packaged in a through-hole TO-220-3, it targets hard-switching topologies in AC-DC converters, power-factor-correction stages, and auxiliary power supplies where the 650 V margin covers universal mains input with derating for ringing on the drain node.

299 mOhm on-resistance — conduction loss budget

For a 12 A peak load, conduction loss at full current reaches about 43 W (I²R), which the 90 W power-dissipation rating at case temperature can handle provided the heatsink keeps Tc below 150°C. The 45 nC total gate charge at 10 V means the gate driver sees a moderate capacitive load — a typical 1 A driver can switch the FET in under 50 ns, keeping crossover losses manageable at 50–100 kHz.

Frequently asked questions

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