STP150N10F7

STMicroelectronics · DeepGATE™, STripFET™ VII Series

STMicroelectronics STP150N10F7, DeepGATE™ STripFET™ VII, N-Channel MOSFET, 100V Vdss, 110A Id, 4.2mOhm Rds(on), TO-220-3, Tube.

STMicroelectronics STP150N10F7
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Technical specifications

STP150N10F7 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8115 pF @ 50 V

Technical details

Power switching with the STP150N10F7

With a maximum Rds(on) of just 4.2 mOhm at 55 A and 10 V gate drive, conduction losses stay low even at high current — a solid choice for motor drives, DC-DC converters, and battery management where you need to switch a lot of current without burning up the TO-220 package.

Through-hole TO-220 — breadboard and bench friendly

Housed in a standard TO-220-3 package, this MOSFET is through-hole mount — easy to hand-solder, breadboard, or socket on a prototype board. The supplier device package is TO-220, so the tab and leadframe are the same as any TO-220 you've used before. The 250 W power dissipation at case temperature gives plenty of thermal headroom when you bolt it to a heatsink.

STP150N10F7
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