STP13NM60ND

STMicroelectronics

STMicroelectronics FDmesh™ II STP13NM60ND, N-Channel MOSFET, 600 V Vdss, 11 A continuous drain, 380 mΩ Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 150°C junction temperature.

STMicroelectronics STP13NM60ND
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Technical specifications

STP13NM60ND specifications
Parameter / AttributeSpecification / Value
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation109W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs24.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds845 pF @ 50 V

Technical details

600 V switching MOSFET for PFC and flyback converters

The TO-220-3 through-hole package makes it a field-swappable part — no lab bench needed, just a screwdriver and a bit of thermal paste.

The 600 V Vdss rating gives you a solid margin for universal-input offline flyback converters (85–265 VAC rectified to ~375 VDC) and single-phase PFC stages. The 380 mΩ Rds(on) at 10 V gate drive is the number to use for conduction loss calculations at full load — at 5.5 A that is about 11.5 W, so the 109 W power dissipation rating and the TO-220 tab need a heatsink sized for your ambient. Gate charge of 24.5 nC at 10 V keeps switching losses manageable for a 100–200 kHz hard-switched converter; the driver stage should source at least 1 A peak to keep the Miller plateau short.

Temperature range and field fit

The wide range also means it survives cold starts in unheated equipment sheds.

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