STP13N60M2

STMicroelectronics

STMicroelectronics STP13N60M2, MDmesh™ II Plus N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on), 17nC Qg, TO-220-3, -55°C to 150°C junction.

STMicroelectronics STP13N60M2
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Technical specifications

STP13N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 100 V

Technical details

600 V, 11 A N-channel MOSFET in TO-220

At 5.5 A the drop is about 2.1 V, so the dissipation in the channel is roughly 11.5 W at that point — well within the 110 W package limit, but the junction temperature rise from that alone is significant if the duty cycle is high. Input capacitance is 580 pF at 100 V drain-source, which keeps the switching losses manageable in a 50–100 kHz hard-switched converter.

Junction temperature range and package

The TO-220 package is a through-hole workhorse — easy to heatsink, reworkable with a standard soldering iron or hot-air station, and the tab is the drain.

STP13N60M2
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