STP12NK30Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ STP12NK30Z, N-Channel MOSFET, 300V Vdss, 9A Id, 400mOhm Rds(on) @ 4.5A, 10V, TO-220-3, -55 to 150°C.

STMicroelectronics STP12NK30Z
Download datasheet (PDF)
[IN STOCK] In Stock: 66 pcs
$1.45/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STP12NK30Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs400mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds670 pF @ 25 V

Technical details

300 V N-channel MOSFET in TO-220 — what this part is

The 400 mOhm maximum on-resistance at 4.5 A with a 10 V gate drive defines its conduction loss profile for switch-mode power supplies, offline converters, and motor-drive circuits. The TO-220 through-hole package suits point-of-load and bulk-power stages where heatsink mounting is standard.

The 400 mOhm Rds(on) at 4.5 A, 10 V is the figure to use for conduction-loss calculations in a 300 V bus application.

Active lifecycle — no LTB concern

No last-time-buy or end-of-life notice is in effect, making it suitable for both new-design-in and ongoing production BOMs. The SuperMESH™ series continues as a current portfolio line from STMicroelectronics.

STP12NK30Z
[ALLOC] verified
Quote