STP11NK40ZFP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ N-channel MOSFET, 400 V Vdss, 9 A continuous drain, 550 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55°C to 150°C junction temperature.

STMicroelectronics STP11NK40ZFP
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[IN STOCK] In Stock: 499 pcs
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Technical specifications

STP11NK40ZFP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs550mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 25 V

Technical details

400 V, 9 A N-channel in TO-220FP — SuperMESH™

STP11NK40ZFP N-channel 400 V 9 A MOSFET in TO-220-3 Full Pack through-hole package — the full-pack construction isolates the mounting tab from the heatsink, eliminating the need for an insulating washer.

On-resistance and gate drive — 550 mOhm at 10 V

The specified drive voltage for achieving the rated Rds(on) is 10 V, making this a standard-threshold device compatible with 10 V gate-drive circuits from PWM controllers or dedicated MOSFET drivers.

Maximum power dissipation is 30 W at case temperature.

STP11NK40ZFP
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