STP11NK40Z

STMicroelectronics

STMicroelectronics STP11NK40Z, SuperMESH™ N-Channel MOSFET, 400V Vdss, 9A Id, 550mOhm Rds(on), TO-220-3 through-hole, -55°C to 150°C.

STMicroelectronics STP11NK40Z
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[IN STOCK] In Stock: 3 pcs
$3.74/ pc

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Technical specifications

STP11NK40Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs550mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 25 V

Technical details

400 V, 9 A — where this MOSFET fits the BOM

The STP11NK40Z: This part is aimed at offline switch-mode power supplies, AC-DC converters, and lighting ballasts where the 400 V blocking voltage provides adequate derating for 240 VAC rectified rails.

The 4.5 V maximum gate threshold at 100 µA drain current means a 10 V gate drive is needed to guarantee the on-resistance spec; at 5 V drive the Rds(on) will be significantly higher, so logic-level gate signals won't cut it. The SuperMESH™ technology includes avalanche energy rating, though the ledger does not specify the single-pulse or repetitive limit — treat the 110 W dissipation as the thermal ceiling for steady-state operation.

STP11NK40Z
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