STP110N8F6

STMicroelectronics

STMicroelectronics STripFET™ F6 N-channel MOSFET, STP110N8F6, 80 V drain-source, 110 A continuous drain, 6.5 mΩ Rds(on) at 55 A/10 V, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

STMicroelectronics STP110N8F6
[IN STOCK] In Stock: 6 pcs
$1.29/ pc

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Technical specifications

STP110N8F6 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9130 pF @ 40 V

Technical details

110 A, 80 V N-channel — the power-switching workhorse

The TO-220-3 through-hole package suits traditional heatsink mounting in industrial power supplies and motor drives where board-level thermal management is straightforward.

At 55 A the conduction loss works out to roughly 20 W, which the 200 W maximum power dissipation can handle with adequate heatsinking. Gate charge is 150 nC at 10 V, a moderate figure that a standard gate driver IC can switch in the 50–100 kHz range without excessive drive loss. Input capacitance measures 9130 pF at 40 V drain-source, which influences the switching speed and the gate-drive current requirement; expect to budget a gate resistor for slew-rate control in hard-switching topologies.

Gate-source voltage is rated ±20 V, which gives margin against overshoot during fast switching transitions.

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