600 V, 8 A N-channel MOSFET in TO-220 — FDmesh™ II
The FDmesh™ II technology integrates a fast-recovery body diode, making this part suited for bridge topologies in switch-mode power supplies and power-factor-correction stages where reverse-recovery losses matter. Key ratings include a maximum drain-source voltage of 600 V, continuous drain current of 8 A at 25°C case temperature, and a maximum on-resistance of 600 mOhm at 4 A drain current with 10 V gate drive.
The 600 V Vdss rating provides adequate headroom for universal-input offline converters (up to 400 V DC bus) with derating for switching transients.
Lifecycle reality — obsolete, sourced through independent channels
STMicroelectronics no longer manufactures this part in volume. When evaluating a replacement, look for a 600 V, 8 A N-channel MOSFET in TO-220 with similar gate charge and Rds(on); the FDmesh™ II fast-recovery diode characteristic may need matching if the replacement is used in a bridge leg.
