STP100NF04

STMicroelectronics · Automotive, AEC-Q101, STripFET™ II Series

STMicroelectronics STP100NF04, Automotive AEC-Q101 STripFET™ II, N-Channel MOSFET, 40V Vdss, 120A Id, 4.6mOhm Rds(on) at 50A, 10V, TO-220-3, -55°C to 175°C.

STMicroelectronics STP100NF04
[IN STOCK] In Stock: 4 pcs
$7.42/ pc

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Technical specifications

STP100NF04 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, STripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5100 pF @ 25 V

Technical details

Through-hole N-channel MOSFET for high-current automotive switching

It is qualified to AEC-Q101, making it a candidate for automotive ECU, motor-drive, and DC-DC converter stages where the junction temperature can reach 175°C. The TO-220-3 through-hole package suits designs where the PCB is the heatsink or the device is bolted to a chassis-mounted heatsink.

Gate charge totals 150 nC at 10 V; a gate driver sourcing 1 A can switch the FET in roughly 150 ns, which sets the transition-loss budget in a hard-switched converter. Input capacitance is 5100 pF at 25 V Vds — the driver must supply the Ciss charge during each switching edge, and the gate-drive loop inductance should be kept under 10 nH to avoid ringing.

STP100NF04
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