STP100N8F6

STMicroelectronics · STripFET™ F6 Series

STMicroelectronics STripFET™ F6 N-Channel MOSFET, STP100N8F6, 80 Vdss, 100 A Id, 9 mOhm Rds(on), TO-220-3, Tube.

STMicroelectronics STP100N8F6
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Technical specifications

STP100N8F6 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation176W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5955 pF @ 25 V

Technical details

80 V, 100 A, 9 mOhm — the switching-loss envelope in a TO-220

The STP100N8F6: The 9 mOhm max on-resistance at 50 A and 10 V gate drive keeps conduction losses under 45 W at full rated current — the 176 W power dissipation ceiling leaves headroom for switching losses in hard-switched topologies.

Through-hole TO-220 — board-fit and thermal path

The TO-220-3 through-hole package mounts into a standard 0.100-inch pitch footprint with the tab as the drain terminal.

Active lifecycle and compliance

The closest through-hole N-channel peers in the STripFET family are the STP120NF10 (100 V, 10.5 mOhm, 110 A) and the STP185N55F3 (55 V, 3.8 mOhm, 120 A). The STP120NF10 is a drop-in replacement for higher voltage margin at the cost of higher on-resistance; the STP185N55F3 offers lower conduction loss but only 55 V drain rating. Neither is a pin-compatible second source — the TO-220 footprint is identical, but the gate charge and capacitance differ, so the drive circuit may need adjustment.

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