STMicroelectronics
STMicroelectronics STP100N6F7, STripFET™ F7 Series, N-Channel MOSFET, 60 V Vdss, 100 A Id, 5.6 mOhm Rds(on) at 50 A, 10 V, 30 nC Qg, TO-220-3, -55°C to 175°C TJ.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 5.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1980 pF @ 25 V |
That 175°C TJ max isn't a number you design to continuously — derate the 125 W dissipation at high ambient — but it gives you margin in a motor-drive or DC-DC converter where the case runs hot. The TO-220 package with a tab soldered to a copper plane or bolted to a heatsink is the standard way to pull that heat out; without a heatsink the 100 A rating is theoretical, not practical.
