600 V, 33 A N-channel in TOLL — conduction loss and switching profile
The gate charge of 72.5 nC at 10 V means a 1 A gate driver can switch the FET in about 72 ns, keeping switching losses manageable up to several hundred kilohertz.
Parametric deep-dive: Rds(on), Qg, and input capacitance
On-resistance is specified at 59 mOhm maximum with Vgs = 10 V and Id = 23.75 A. This is the figure to use for worst-case conduction loss in a 600 V bus application like a 1 kW PFC stage or an LLC half-bridge. The 3400 pF input capacitance at 100 V drain bias influences the gate-drive loop — a higher Ciss slows the Miller plateau and increases turn-on delay, so the gate resistor and driver strength must be selected to avoid shoot-through in a half-bridge. Gate threshold voltage is 4.75 V maximum at 250 µA drain current. With a 10 V recommended drive, the FET is fully enhanced and the Rds(on) is at its minimum. The ±25 V maximum gate-source rating provides margin for ringing on the gate node in hard-switching topologies.
The MDmesh™ DM6 series is ST's mainstream high-voltage MOSFET platform, so the part is widely stocked by distributors and available for both prototype and volume replenishment. The TOLL (HV) package is a JEDEC-standard footprint, so second-source options from other manufacturers using the same package are mechanically interchangeable — though electrical parameters always need verification.
Sourcing and procurement posture
For volume BOM lines or urgent prototype needs, submit an RFQ with the target quantity and required delivery window.