STMicroelectronics · STripFET™ II Series
STMicroelectronics STripFET™ II, STN4NF03L, N-Channel MOSFET, 30V Vdss, 6.5A Id, 50mOhm Rds(on) at 10V, SOT-223, -55°C to 150°C.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 3.3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 330 pF @ 25 V |
The STN4NF03L: It comes in a SOT-223 surface-mount package — the same footprint as a medium-power bipolar transistor, so it swaps into existing board layouts without a respin.
The minimum recommended drive voltage is 5 V.
The 3.3 W power dissipation at case temperature is the thermal budget — in a SOT-223 without a copper pour, you'll derate that to about 1.5 W in still air at 70°C ambient.
