STMicroelectronics · STripFET™ II Series
STMicroelectronics STripFET™ II STN3NF06L, N-Channel MOSFET, 60 V Vdss, 4 A Id, 100 mOhm Rds(on) at 10 V, SOT-223, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 3.3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2.8V @ 250µA |
| Rds on (Max) @ id, vgs | 100mOhm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 25 V |
The STN3NF06L: The gate threshold is specified at 2.8 V max with 250 µA drain current. On-resistance is guaranteed at 5 V and 10 V drive.
The SOT-223 package is a surface-mount part with a large tab for heat sinking — the 3.3 W dissipation limit assumes the tab is soldered to a copper area on the PCB.
