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STMicroelectronics STN3NF06L
STMicroelectronics

STN3NF06L N-Channel MOSFET, 60 V, 4 A, SOT-223

MPNSTN3NF06L
End of Life

STMicroelectronics STripFET™ II STN3NF06L, N-Channel MOSFET, 60 V Vdss, 4 A Id, 100 mOhm Rds(on) at 10 V, SOT-223, -55 to 150 °C.

$0.99Ref. price · indicative, final on quote
STN3NF06L datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STN3NF06L Technical Specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation3.3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 25 V

Product details

The STN3NF06L: The gate threshold is specified at 2.8 V max with 250 µA drain current. On-resistance is guaranteed at 5 V and 10 V drive. Total gate charge is 9 nC at 5 V, and input capacitance is 340 pF at 25 V drain.

Temperature range and environment — where it goes

The SOT-223 package is a surface-mount part with a large tab for heat sinking — the 3.3 W dissipation limit assumes the tab is soldered to a copper area on the PCB. For continuous 4 A operation, the board copper and airflow must keep the junction below 150°C.

Frequently asked questions

Is the STN3NF06L obsolete or end of life?

No. It is ROHS3 compliant and available for new designs.

What is the Vgs(th) of the STN3NF06L?

The maximum gate threshold voltage is 2.8 V at 250 µA drain current. A 3.3 V logic signal will turn the MOSFET on, but for the rated 100 mOhm on-resistance you need 10 V gate drive.