STN3N40K3

STMicroelectronics · SuperMESH3™ Series

STMicroelectronics SuperMESH3™ STN3N40K3, N-Channel MOSFET, 400V Vdss, 1.8A Id, 3.4Ohm Rds(on) @ 600mA/10V, SOT-223, -55°C to 150°C.

STMicroelectronics STN3N40K3
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[IN STOCK] In Stock: 251 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STN3N40K3 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.8A (Tc)
Power dissipation3.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs3.4Ohm @ 600mA, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds165 pF @ 50 V

Technical details

400 V N-channel in a compact SOT-223

The STMicroelectronics STN3N40K3 is an N-channel power MOSFET from the SuperMESH3™ series, rated for 400 V drain-source voltage and 1.8 A continuous drain current at case temperature. It comes in a surface-mount SOT-223 package (TO-261-4), making it a fit for space-constrained offline power supplies, auxiliary converters, and LED lighting drivers where board area is tight. The 3.4 Ohm maximum on-resistance at 600 mA and 10 V gate drive gives a reasonable conduction loss for a part this size. The 11 nC gate charge at 10 V means a small-signal MOSFET driver or a PWM controller output can switch it without a dedicated driver stage. Operating junction temperature spans -55°C to 150°C, so the part is at home in avionics, downhole instrumentation, or outdoor telecom gear where the ambient can swing wide. The 165 pF input capacitance at 50 V drain-source keeps switching losses moderate in the 50-150 kHz range typical of flyback converters.

Lifecycle and sourcing

The STN3N40K3 is listed as Active with ROHS3 compliance.

STN3N40K3
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