STMicroelectronics · SuperMESH™ Series
STMicroelectronics SuperMESH™, STN1NK60ZL, N-Channel MOSFET, 600 V Vdss, 300 mA Id, 15 Ohm Rds(on) @ 400 mA, 10 V, SOT-223, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 300mA (Tc) |
| Power dissipation | 3.3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 15Ohm @ 400mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 94 pF @ 25 V |
Rds(on) of 15 Ohm at Vgs=10 V and 400 mA is specified at 25 °C junction; actual on-resistance rises with temperature per the normalised curve in the datasheet.
The SOT-223 package (TO-261-4) is a surface-mount footprint with a large copper pad on the tab side for heat sinking. Maximum power dissipation is 3.3 W at case temperature.
