The STN1NK60ZL is an N-channel MOSFET from ST's SuperMESH™ series, rated for a 600 V drain-to-source voltage and a continuous drain current of 300 mA at 25 °C case temperature. The 15 Ohm maximum on-resistance at 400 mA gate drive of 10 V sets the conduction loss floor for the load current.
On-resistance and gate charge — the switching-loss trade-off
Rds(on) of 15 Ohm at Vgs=10 V and 400 mA is specified at 25 °C junction; actual on-resistance rises with temperature per the normalised curve in the datasheet. Total gate charge of 6.9 nC at 10 V means the gate driver needs only a modest current budget.
Package and thermal — SOT-223 layout notes
The SOT-223 package (TO-261-4) is a surface-mount footprint with a large copper pad on the tab side for heat sinking. Maximum power dissipation is 3.3 W at case temperature.
