STN1HNK60

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ STN1HNK60, N-Channel MOSFET, 600 V Vdss, 400 mA Id, 8.5 Ohm Rds(on) at 10 V, SOT-223 package, -55 to 150 °C.

STMicroelectronics STN1HNK60
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[IN STOCK] In Stock: 13,100 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STN1HNK60 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C400mA (Tc)
Power dissipation3.3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs8.5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds156 pF @ 25 V

Technical details

Total gate charge is 10 nC at 10 V — a low figure that keeps gate-drive power negligible in flyback converters switching at 65–100 kHz.

Temperature range and thermal derating

Maximum power dissipation of 3.3 W at case temperature 25 °C must be derated above that point — the SOT-223's thermal resistance to ambient on a typical 1 oz copper pad runs about 80–100 °C/W, so a 1 W dissipation raises junction roughly 80–100 °C above ambient.

Active lifecycle, ROHS3, no direct second source

ROHS3 compliant. No official pin-compatible second source is listed on the record; for dual-sourcing, qualify a functionally equivalent 600 V N-channel in SOT-223 from a second vendor against the same Rds(on) and gate-charge targets.

STN1HNK60
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