STMicroelectronics MDmesh™ II Plus STL9N60M2, N-Channel 600 V 4.8 A (Tc) MOSFET, 860 mOhm Rds(on) @ 2.4 A, 10 V, 10 nC gate charge, PowerFlat™ (5x6) HV package, Surface Mount, 150°C (TJ).
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.8A (Tc) |
| Power dissipation | 48W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 860mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 100 V |
The STL9N60M2 is an N-channel 600 V power MOSFET from STMicroelectronics' MDmesh™ II Plus series.
The 48 W maximum power dissipation rating defines the thermal budget for the application.
The PowerFlat™ (5x6) HV package is a surface-mount, thermally enhanced package with an exposed pad. The 5x6 mm footprint requires adequate creepage distance for the 600 V drain voltage.
The maximum power dissipation is 48 W at the case temperature (Tc). This rating assumes the device is mounted on a suitable heatsink or PCB copper area to keep the junction temperature within the 150°C maximum.
Yes. The 600 V drain-source breakdown voltage provides adequate margin for the reflected voltage and leakage spike in a typical offline flyback converter. The low gate charge (10 nC) and low input capacitance (320 pF) support switching frequencies up to several hundred kilohertz, making it suitable for compact flyback designs in AC-DC adapters and auxiliary supplies.
Yes, the STL9N60M2 is ROHS3 compliant, meeting the EU's latest restriction of hazardous substances directive.