STMicroelectronics · MDmesh™ II Plus Series
STMicroelectronics MDmesh™ II Plus STL9N60M2, N-Channel 600 V 4.8 A (Tc) MOSFET, 860 mOhm Rds(on) @ 2.4 A, 10 V, 10 nC gate charge, PowerFlat™ (5x6) HV package, Surface Mount, 150°C (TJ).
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.8A (Tc) |
| Power dissipation | 48W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 860mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 100 V |
The STL9N60M2 is an N-channel 600 V power MOSFET from STMicroelectronics' MDmesh™ II Plus series.
The 48 W maximum power dissipation rating defines the thermal budget for the application.
The PowerFlat™ (5x6) HV package is a surface-mount, thermally enhanced package with an exposed pad. The 5x6 mm footprint requires adequate creepage distance for the 600 V drain voltage.
