STL90N10F7

STMicroelectronics · DeepGATE™, STripFET™ VII Series

STMicroelectronics DeepGATE™, STripFET™ VII series, STL90N10F7, N-Channel MOSFET, 100 V Vdss, 70 A continuous drain, 10.5 mOhm Rds(on) at 10 V, 39 nC gate charge, PowerFlat™ 5x6 surface-mount package.

STMicroelectronics STL90N10F7
Download datasheet (PDF)
[IN STOCK] In Stock: 57,799 pcs
$0.35/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL90N10F7 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation5W (Ta), 100W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs10.5mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3550 pF @ 50 V

Technical details

The 100 V drain-to-source rating provides comfortable margin for 48 V bus converters, 24 V industrial supplies, and 12 V automotive systems where load-dump transients can exceed 40 V.

39 nC gate charge — switching speed and driver sizing

Total gate charge is 39 nC at 10 V, a moderate figure that allows switching frequencies up to several hundred kHz with a standard gate driver. The 3550 pF input capacitance at 50 V drain-source tells the driver the capacitive load it must charge each cycle — a 1 A driver charges it in about 3.5 ns, though the practical switching speed is limited by the gate loop inductance and the driver's source/sink capability.

ROHS3 compliant per the listing.

PowerFlat 5x6 — thermal and footprint considerations

STL90N10F7
[ALLOC] verified
Quote