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STMicroelectronics STL8P4LLF6

STL8P4LLF6 P-Channel MOSFET, 40 V, 20.5 mOhm Rds(on)

MPNSTL8P4LLF6
End of Life

STMicroelectronics STL8P4LLF6, STripFET F6 series, P-Channel MOSFET, 40 V Vdss, 20.5 mOhm Rds(on) at 4 A, 10 V, 22 nC gate charge, PowerFlat 3.3x3.3, Surface Mount.

$1.2Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

STL8P4LLF6 Technical Specifications
ParameterValue
SeriesSTripFET™ F6
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Tj)
Power dissipation2.9W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs20.5mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2850 pF @ 25 V

Product details

P-channel 40 V switch in a 3.3x3.3 PowerFlat package

It comes in a PowerFlat 3.3x3.3 surface-mount package, which keeps the footprint small while the exposed pad handles thermal dissipation.

20.5 mOhm on-resistance — the number that decides the load budget

Rds(on) is specified at 20.5 mOhm maximum with a 4 A drain current and 10 V gate drive. That figure sets the conduction loss floor for a load switch or battery isolation circuit — at 4 A the I²R loss is about 0.33 W, well within the 2.9 W power dissipation limit at ambient. The gate threshold is 2.5 V maximum at 250 µA, so logic-level drive at 4.5 V turns it on fully, though the lowest Rds(on) is achieved at 10 V.

Total gate charge is 22 nC at 4.5 V. A small gate-driver IC or a GPIO with a series resistor can switch this FET at tens of kHz without excessive drive current. The input capacitance is 2850 pF at 25 V drain-source, which sets the switching energy per cycle — a consideration if the design runs above 100 kHz.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the STL8P4LLF6?

The maximum Rds(on) is 20.5 mOhm at a drain current of 4 A and a gate-source voltage of 10 V.

What is the gate charge of the STL8P4LLF6?

The maximum total gate charge is 22 nC at a gate-source voltage of 4.5 V.