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STMicroelectronics STL8N6F7

STL8N6F7 N-Channel MOSFET 60V 36A STripFET F7 PowerFlat

MPNSTL8N6F7
End of Life

STMicroelectronics STripFET™ F7 N-Channel MOSFET, STL8N6F7, 60 V Vdss, 36 A continuous drain, 25 mOhm Rds(on) at 10 V, 8 nC gate charge, PowerFlat 3.3x3.3 surface-mount package.

$0.87Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL8N6F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation3W (Ta), 60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 25 V

Product details

60 V, 36 A N-channel in a PowerFlat 3.3x3.3

The STL8N6F7 is an N-channel MOSFET from ST's STripFET™ F7 series, rated for 60 V drain-to-source and 36 A continuous drain current at 25°C case temperature. It comes in a PowerFlat™ 3.3x3.3 surface-mount package (8-PowerVDFN), designed for compact power conversion and load switching where board space is tight.

ROHS3 compliant.

Frequently asked questions

Is STL8N6F7 suitable for high-frequency switching?

Yes, with an 8 nC gate charge and 450 pF input capacitance, the STL8N6F7 is well-suited for switching frequencies in the 100 kHz to 1 MHz range typical of DC-DC converters and synchronous rectifiers.