STMicroelectronics · STripFET™ F7 Series
STMicroelectronics STripFET™ F7 N-Channel MOSFET, STL8N6F7, 60 V Vdss, 36 A continuous drain, 25 mOhm Rds(on) at 10 V, 8 nC gate charge, PowerFlat 3.3x3.3 surface-mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 3W (Ta), 60W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 25mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 450 pF @ 25 V |
The STL8N6F7 is an N-channel MOSFET from ST's STripFET™ F7 series, rated for 60 V drain-to-source and 36 A continuous drain current at 25°C case temperature. It comes in a PowerFlat™ 3.3x3.3 surface-mount package (8-PowerVDFN), designed for compact power conversion and load switching where board space is tight.
ROHS3 compliant.
