STMicroelectronics STripFET F3 series, STL7N6LF3, N-Channel MOSFET, 60 V Vdss, 20 A Id, 43 mOhm Rds(on) @ 3 A, 10 V, AEC-Q101, PowerFlat 5x6.
| Parameter | Value |
|---|---|
| Series | STripFET™ F3 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 4.3W (Ta), 52W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 43mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 432 pF @ 25 V |
The STL7N6LF3: Gate charge is 8.7 nC at 10 V. Input capacitance Ciss is 432 pF at 25 V Vds.
Maximum power dissipation is 4.3 W at 25°C ambient and 52 W at 25°C case temperature — the wide gap reflects the thermal resistance improvement from soldering the PowerFlat 5x6 exposed pad to a copper plane.
Actual on-resistance increases with junction temperature per the normalised curve in the datasheet — budget approximately 1.6× the 25°C value at 150°C junction.