AEC-Q101 qualification and the -55 °C to 175 °C junction temperature range suit it for under-hood and transmission-mounted electronics where ambient heat soaks well above 85 °C.
Gate charge and switching speed — 13 nC at 4.5 V
Total gate charge is 13 nC at 4.5 V, which means a standard 1 A gate driver can switch this FET in about 13 ns. The 1800 pF input capacitance at 25 V drain-source is moderate for a 70 A device, so the gate drive loop — trace inductance and driver output impedance — will dominate the switching edge, not the FET's own capacitance. Low Qg also reduces cross-conduction losses in half-bridge topologies where dead time is tight.
Package and mounting — PowerFlat with wettable flanks
The 8-lead PowerFlat (5x6 mm) package uses wettable flanks, which means the side pads are solderable — this allows automated optical inspection (AOI) of the solder joints after reflow, a requirement for automotive-grade assembly. The large exposed pad on the bottom conducts heat to the PCB copper plane; the 72 W power dissipation rating assumes a thermal pad with adequate via array and a 2 oz copper pour on the top layer.
Active production and compliance status
It is ROHS3 compliant and qualified to AEC-Q101, so it meets the automotive stress-test requirements for temperature cycling, high-temperature reverse bias, and humidity.