STL56N3LLH5 N-channel MOSFET: 9 mOhm Rds(on) at 10 V, 6.5 nC gate charge at 4.5 V. Maximum power dissipation is 62.5 W at the case, but the practical limit in a PowerFlat 5x6 package depends on the PCB copper area under the exposed pad. The operating junction range runs from -55 °C to 150 °C, so the part can handle a hot backplane or an outdoor enclosure without derating the junction limit.
STL56N3LLH5 N-Channel MOSFET, 30 V, 56 A, 9 mOhm, PowerFlat
MPNSTL56N3LLH5
End of Life
STMicroelectronics STripFET™ V, N-Channel MOSFET, 30 V Vdss, 56 A Id, 9 mOhm Rds(on) at 10 V, 6.5 nC Qg, PowerFlat 5x6, -55 to 150 °C.
$1.21Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
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Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ V |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +22V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 950 pF @ 25 V |
Product details
Frequently asked questions
Does STL56N3LLH5 have a recommended alternative with lower Rds(on)?
No official alternative with a lower on-resistance is listed on the STMicroelectronics cross-reference for this part. The 9 mOhm at 10 V is the rated figure for this STripFET V device.