STMicroelectronics MDmesh™ DM6 series, N-Channel 600 V, 0.084 Ohm typ., 45 A (Tc), 84mOhm @ 22.5A, 10V, 52 nC gate charge, 8-PowerVDFN, PowerFlat™ (8x8) HV, -55°C ~ 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 174W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 84mOhm @ 22.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2468 pF @ 100 V |
The STL52N60DM6: Gate charge is 52 nC at 10 V; input capacitance is 2468 pF at 100 V.
The pad carries the full 174 W power dissipation rating at case temperature — without a proper via array under the pad, the junction will exceed the 150°C limit well before the current rating is reached. Preheat the board to 100°C, apply flux, and lift with hot air.
Maximum gate threshold is 4.75 V at 250 µA; use 10 V gate drive for rated on-resistance.
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